FULL REPORT [US$ 8 250 (eight thousand two hundred fifty US Dollars)]

INTRODUCTION [US$ 0]

• Table 2-1 ACRONYMS AND ABBREVIATIONS USED IN THIS STUDY

TECHNOLOGY [US$ 1 250]

• Figure 3-1 RC DELAYS IN SEMICONDUCTORS AS A FUNCTION OF FEATURE SIZE
• Figure 3-2 SILICIDE AND TITANIUM NITRIDE GATE CONTACTS
• Figure 3-3 CONVENTIONAL BEOL CONFIGURATION
• Figure 3-4 BARRIER METALS FOR WITH TUNGSTEN PLUGS
• Figure 3-5 COMPARISON OF ETCH-BACK AND DUAL-DAMASCENE PROCESSING
• Figure 3-6a VIA-FIRST DUAL-DAMASCENE SCHEME, STEP 1
• Figure 3-6b VIA-FIRST DUAL-DAMASCENE SCHEME, STEP 2
• Figure 3-6c VIA-FIRST DUAL-DAMASCENE SCHEME, STEP 3
• Figure 3-6d VIA-FIRST DUAL-DAMASCENE SCHEME, STEP 4
• Figure 3-6e VIA-FIRST DUAL-DAMASCENE SCHEME, STEP 5
• Figure 3-7a TRENCH-FIRST DUAL-DAMASCENE SCHEME, STEP 1
• Figure 3-7b TRENCH-FIRST DUAL-DAMASCENE SCHEME, STEP 2
• Figure 3-7c TRENCH-FIRST DUAL-DAMASCENE SCHEME, STEP 3
• Figure 3-7d TRENCH-FIRST DUAL-DAMASCENE SCHEME, STEP 4
• Figure 3-8a BURIED ETCH-STOP DUAL-DAMASCENE, STEP 1
• Figure 3-8b BURIED ETCH-STOP DUAL-DAMASCENE, STEP 2
• Figure 3-9 DOUBLE-SINGLE-DAMASCENE COPPER PROCESSING
• Figure 3-10 ATMOSPHERIC PRESSURE CVD PROCESS
• Figure 3-11 LOW-PRESSURE CVD PROCESS
• Figure 3-12 PLASMA-ENHANCED CVD PROCESS
• Figure 3-13 HIGH-DENSITY PLASMA CVD PROCESS
• Figure 3-14 VOIDS AND CLIPPED CORNERS UNDER CVD
• Figure 3-15 ATOMIC LAYER DEPOSITION
• Figure 3-16 MODES OF COPPER ELECTROCHEMICAL DEPOSITION
• Table 3-1 2001 ITRS FOR MICROPROCESSORS HIGHLIGHTS
• Table 3-2 2001 ITRS FOR DRAM HIGHLIGHTS

APPLICATIONS [US$ 2 075]

• Figure 4-1 PHOTOLITHOGRAPHIC OPERATIONS BY LAYER TYPE, 2001 TO 2006
• Figure 4-2 METALLIZATION OPERATIONS IN ASICs BY LAYER TYPE, 2001 TO 2006
• Figure 4-3 TOP SUPPLIERS OF ASICs, 2001
• Figure 4-5 TOP SUPPLIERS OF DSPs, 2001
• Figure 4-6 METALLIZATION OPERATIONS IN MICROPROCESSORS BY LAYER TYPE, 2001 TO 2006
• Figure 4-7 TOP SUPPLIERS OF MICROPROCESSORS, 2001
• Figure 4-8 METALLIZATION OPERATIONS IN MEMORY BY LAYER TYPE, 2001 TO 2006
• Figure 4-9 TOP SUPPLIERS OF FLASH MEMORY, 2001
• Figure 4-10 TOP SUPPLIERS OF DRAM, 2001
• Figure 4-11 TOP SUPPLIERS OF SRAM, 2001
• Table 4-1 PERFORMANCE COMPARISON OF VARIOUS BARRIER LAYERS

METALLIZATION PRECURSOR MATERIALS [US$ 3 725]

• Table 5-1 MATERIALS USED IN SEMICONDUCTOR METAL DEPOSITION
• Table 5-2 PRIMARY AND ANCILLARY METALLIZATION PRECURSORS, BY DEPOSITION PROCESS
• Table 5-3 OVERALL CONSUMPTION OF METALLIZATION PRECURSORS, 2001 TO 2006

PHYSICAL VAPOR DEPOSITION PRECURSOR MATERIALS [US$ 1 300]

CHEMICAL VAPOR DEPOSITION PRECURSOR MATERIALS [US$ 1 300]

• Table 5B-3 SUPPLIERS OF CVD AND MOCVD PRECURSORS
• Figure 5B-1 REGIONAL DISTRIBUTION OF THE CVD MATERIALS MARKET, 2001
• Table 5B-1 COMMON INORGANIC CVD PRECURSORS
• Table 5B-2 COMMON ORGANIC CVD PRECURSORS

ELECTROCHEMICAL AND ADVANCED PRECURSOR MATERIALS
[US$ 1 300]

• Table 5C-1 SUPPLIERS OF ELECTROPLATING MATERIALS PRECURSORS
• Figure 5C-1 REGIONAL DISTRIBUTION OF THE ECD MATERIALS MARKET, 2001

SUPPLIERS [US$ 2 075]

• Figure 6-1 SUPPLIERS OF METALLIZATION MATERIALS, 2001
• Table 6-2 ELECTRONIC PRODUCTS PORTFOLIO OF AIR PRODUCTS AND CHEMICALS
• Table 6-3 OTHER SUPPLIERS OF METALLIZATION PRECURSORS
• Table 6-1 SHARES OF METALLIZATION MATERIALS SOLD TO THE SEMICONDUCTOR INDUSTRY, 2001

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