LOW-K
DIELECTRICS MARKET STALLS TEMPORARILY
LITTLE
FALLS, NJ, April 3, 2002...The low-k dielectrics market may be slow
getting out of the starting gate, according to a recently completed
study by Kline & Company, but the long-term potential for this technology
sector remains strong.
The market
for low-k dielectrics-materials exhibiting a low dielectric constant
that are needed for leading-edge semiconductor fabrication-is projected
to expand from only about $16 million this year to nearly $400 million
by 2006. "The real ramp-up should occur in 2003 and 2004, when
production at 100-nm design rules start coming to commercialization,"
says John Davis, business manager at Kline & Company, a leading
international business consulting firm based in Little Falls, NJ. The
market will rise by two to four times the previous year's level in each
of these two years, according to Davis.
These projections
are based on findings from Kline's syndicated analysis titled DIELECTRIC
MATERIALS IN SEMICONDUCTOR DEVICES TO THE SUB-0.10-MICRON RULE.
This publication is an update to a similar study that Kline published
in early 2000. At that time, the dielectrics market was expected to
start accelerating significantly in 2001/2002. The two-year delay is
due to a number of factors, but chief among these are:
Technical
developments
Some of the
more noteworthy technical developments in the low-k market that are
cited in the Kline report include the following:
Spin-on stop-etch
materials. Companies selling spin-on precursors recognize the need to
include a stop-etch material to complement the interlevel dielectrics
(ILD) that they are developing. Several companies are working on this
problem, and all are suggesting a silico-organic material for this application.
Dow Chemical, Dow Corning, Honeywell, and Shipley have all said that
they have such products under development.
Porosity.
Dow Chemical, which has established a commercial beachhead with a dense
version of SiLK polyphenylene, has developed a porous version for the
100-nm and lower design rules. Dow Corning, Honeywell, and nearly every
other developer of spin-on precursors are also developing porous dielectrics
and expect compete with Dow at this design rule.
CVD processes
extended. Equipment vendors such as Applied Materials and Novellus have
extended the horizon for CVD processes with technology that results
in more highly strained lattices in oxide films. CVD technology will
now compete at the 100-nm level, and probably the 70-nm level as well.
Trikon, developer of the Flowfill process, which deposits film in a
CVD chamber as a liquid, is rumored to have reached the 2.2 level in
its latest process design.
Established
in 1959, Kline & Company, Inc. is a leading business consulting
firm serving the electronics, specialty chemical, and materials industries
worldwide. DIELECTRIC MATERIALS IN SEMICONDUCTOR DEVICES TO THE SUB-0.10-MICRON
RULE is the latest in a series focusing on dielectric materials.
For information on how to subscribe to any of Kline's studies in the
electronic chemicals and materials industry, or to inquire about how
Kline can assist you in customized consulting engagements, contact
directly at Kline & Company, Inc., 150 Clove Road, Little Falls,
NJ 07424; at (973) 435-3432.